Temperature and wavelength dependence of Fermi-tail photoemission and two-photon photoemission from multialkali semiconductors
نویسندگان
چکیده
Temperature and wavelength dependence of Fermi-tail photoemission and two-photon photoemission from multialkali semiconductors Mark C. Booth, Bahaa E. A. Saleh, Alexander V. Sergienko, and Malvin C. Teich Quantum Imaging Laboratory, Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary’s Street, Boston, Massachusetts 02215; Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; and Biomedical Engineering, Boston University, 44 Cummington Street, Boston, Massachusetts 02215
منابع مشابه
Momentum and energy dependence of the anomalous high-energy dispersion in the electronic structure of high temperature superconductors.
Using high-resolution angle-resolved photoemission spectroscopy we have studied the momentum and photon energy dependence of the anomalous high-energy dispersion, termed waterfalls, between the Fermi level and 1 eV binding energy in several high-T_{c} superconductors. We observe strong changes of the dispersion between different Brillouin zones and a strong dependence on the photon energy aroun...
متن کاملConfirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy.
Soft x-ray photoemission spectroscopy measurements of Fermi-level positions within the band gap of clean, GaAs(100) surfaces demonstrate that photovoltaic charging produces a major shift in the apparent band bending at low (50-100 K) temperatures. These measurements confirm recent predictions of Hecht [M. H. Hecht, Phys. Rev. B 41, 7918 (1990)], based on restoring currents limited by carrier tr...
متن کاملSimple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials
The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementi...
متن کاملElectronic structure of CoSi(2) films on Si(111) studied using time-resolved two-photon photoemission.
The occupied and unoccupied electronic structure of thin epitaxial CoSi(2) films grown on Si(111) substrates was studied using time-resolved two-photon photoemission and valence-band photoemission spectroscopy. The work function of the sample surfaces and the Schottky barrier height at the metal-semiconductor interface were measured as a function of annealing temperature. The photoemission data...
متن کاملTemperature-dependent internal photoemission probe for band parameters
The temperature-dependent characteristic of band offsets at the heterojunction interface was studied by an internal photoemission (IPE) method. In contrast to the traditional Fowler method independent of the temperature (T), this method takes into account carrier thermalization and carrier/dopant-induced band-renormalization and band-tailing effects, and thus measures the band-offset parameter ...
متن کامل